elektronische bauelemente 2N5401 -0.6 a, -160 v pnp plastic encapsulated transistor 4-feb-2010 rev. b page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 2 base 1 emitter collector 3 rohs compliant product a suffix of -c specifies halogen & lead-free features switching and amplification in high voltage applications such as telephony low current (max. 600ma) high voltage (max. 160v) absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo -160 v collector to emitter voltage v ceo -150 v emitter to base voltage v ebo -5 v collector current - continuous i c -0.6 a collector power dissipation p c 0.625 w junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min typ max unit test condition collector to base breakdown voltage v (br)cbo -160 - - v i c =-100 a, i e = 0a collector to emitter breakdown voltage v (br)ceo -150 - - v i c =-1ma, i b = 0a emitter to base breakdown voltage v (br)ebo -5 - - v i e =-10 a, i c = 0a collector cut-off current i cbo - - -50 na v cb =-120 v, i e = 0 a emitter cut-off current i ebo - - -50 na v eb =-3 v, i c = 0 a h fe(1) 80 - - v ce =-5v, i c =-1ma h fe(2) 60 - 240 v ce =-5v, i c =-10ma dc current gain h fe(3) 50 - - v ce =-5v, i c =-50ma collector to emitter saturation voltage v ce(sat) - - -0.5 v i c =-50ma, i b =-5ma base to emitter saturation voltage v be(sat) - - -1 v i c =-50ma, i b =-5ma transition frequency f t 100 - 300 mhz v ce = -5v, i c = -10ma, f=30mhz to-92 millimeter ref. min. max. a 4.40 4.70 b 4.30 4.70 c 12.70 - d 3.30 3.81 e 0.36 0.56 f 0.36 0.51 g 1.27 typ. h 1. 10 - j 2.42 2.66 k 0.36 0.76 a c e k f d b g h j
elektronische bauelemente 2N5401 -0.6 a, -160 v pnp plastic encapsulated transistor 4-feb-2010 rev. b page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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